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We use spatial spin separation by a magnetic focusing technique to probe the polarization of quantum point contacts. The point contacts are fabricated from p-type GaAs/AlGaAs heterostructures. A finite polarization is measured in the low density regime, when the conductance of a point contact is tuned to < 2e(2)/h. Polarization is stronger in samples with a well defined '0.7 structure'.
Comment: 5 pages, 4 figures. Author affiliation clarified; acknowledgements modified. Replacement reason clarified
Comment: revised discussion and data analysis, accepted to PRL
We present a two-dimensional electron heterostructure field effect device of simplistic design and ease of fabrication that displays high mobility electron transport. This is accomplished using a high efficacy contacting scheme and simple metallic overlapping gate, obviating dopant layers. The resultant devices demonstrate adjustable electron densities and mobilities larger than 8x106 cm2/V-sec at the highest densities of 2.4x1011/cm2. This device type provides an experimental avenue for studying electron correlations and may answer demands for routine fabrication of practical HEMTs.
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