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Comment: 20 pages, 11 figures, 1 table; v2: explanation added in section 2, some minor changes
Comment: 4 pages, 3 figures. to appear in Phys. Rev. Lett
Colossal negative magnetoresistance and the associated field-induced insulator-to-metal transition, the most characteristic features of magnetic semiconductors, are observed in n-type rare earth oxides and chalcogenides, p-type manganites, n-type and p-type diluted magnetic semiconductors (DMS) as well as in quantum wells of n-type DMS. Here, we report on magnetostransport studies of Mn modulation-doped InAs quantum wells, which reveal a magnetic field driven and bias voltage dependent insulator-to-metal transition with abrupt and hysteretic changes of resistance over several orders of magnitude. These phenomena coexist with the quantised Hall effect in high magnetic fields. We show that the exchange coupling between a hole and the parent Mn acceptor produces a magnetic anisotropy barrier that shifts the spin relaxation time of the b...
Comment: 7 pages, including 4 figures Changes made to introduction Added figure Submitted to SSC
Measurements of elastic and inelastic cotunneling currents are presented on a two-terminal Aharonov--Bohm interferometer with a Coulomb blockaded quantum dot embedded in each arm. Coherent current contributions, even in magnetic field, are found in the nonlinear regime of inelastic cotunneling at finite bias voltage. The phase of the Aharonov--Bohm oscillations in the current exhibits phase jumps of $\pi$ at the onsets of inelastic processes. We suggest that additional coherent elastic processes occur via the excited state. Our measurement technique allows the detection of such processes on a background of other inelastic current contributions and contains information about the excited state occupation probability and the inelastic relaxation rates.
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