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We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n-i-p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30μm thick a-Si:H films deposited on top of an ASIC containing a linear array of high-speed low-noise transimpedance amplifiers designed in a 0.25μm CMOS technology. Experimental results presented have been obtained with a 600nm pulsed laser. The results of charge collection efficiency and charge collection speed of these structures are discussed. © 2003 Elsevier B.V. All rights reserved.
Firsts results on particle detection using a novel silicon pixel detector are presented. The sensor consists of an array of 48 square pixels with 380 μm pitch based on a n-i-p hydrogenated amorphous silicon (a-Si:H) film deposited on top of a VLSI chip. The deposition was performed by VHF-PECVD, which enables high rate deposition up to 2 nm/s. Direct particle detection using beta particles from 63Ni and 90Sr sources was performed. © 2004 Elsevier B.V. All rights reserved.
Pixel microvertex detectors at the SLHC and a future linear collider face very challenging issues: extreme radiation hardness, cooling design, interconnections density and fabrication cost. As an alternative approach we present a novel pixel detector based on the deposition of a Hydrogenated Amorphous Silicon (a-Si:H) film on top of a readout ASIC. The Thin-Film on ASIC (TFA) technology is inspired by an emerging microelectronic technology envisaged for visible light Active Pixel Sensor (APS) devices. We present results obtained with a-Si:H sensor films deposited on a glass substrate and on ASIC, including the radiation hardness of this material up to a fluence of 3.5×1015 p/cm2. © 2005 Elsevier B.V. All rights reserved.
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