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[[abstract]]A new photovoltaic material, CuInS2 has been investigated. Mainly due to its direct band gap of 1.5 eV, CuInS2 promises to offer high conversion efficiency as a solar cell. Single crystals are grown by chemical vapor transport. Theoretical calculations and experiments were carried out in order to determine the optimum growth conditions, and later similar calculations were done for heterojunction epitaxial layers. Since properties of CuInS2 are not well known, doping and annealing effects were studied, and methods to determine CuInS2 composition and its impurity contents were developed. Low cost arrays may be constructed in two ways. One way is by employing both RF sputtering and flash evaporation methods. Another way is by tandem cells of very high efficiency to be coupled with concentrators.
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