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Integrated Bragg X ray scattering intensities for monatomic crystalline lattices, considering thermal diffuse component contribution
The paper presents polycrystalline X-ray diffraction data for three high-pressure phases of InSb. The study employed two types of diamond-anvil pressure cells. The X-ray diffraction parameters were recorded at different fixed pressures and temperatures on flat film. The experiment utilized Zr-filtered Mo radiation. The intensities were estimated from the X-ray photographs using a semiautomated microdensitometer.
New experimental results are reported for structural transitions at high pressure in several III-V compounds and two II-VI compounds. These data, together with earlier results, are then compared with the predictions of model calculations of Van Vechten. Experimental transition pressures are often at variance with calculated values. However, his calculation assumes that the high pressure phase is metallic, with the beta-Sn structure. The present results show that several compounds assume an ionic NaCl structure at high pressure, while others have neither the beta-Sn nor NaCl structure.
A variable pressure diamond anvil cell is described for operation at temperatures continuously variable from 300 down to 2 K and controllable within 10 mK. Polycrystalline X-ray data are collected from the pressure cavity by means of either (1) standard photographic techniques, (2) diffractometer measurements, or (3) energy dispersive diffractometry. The facility has been used to examine parts of the phase diagram of Bi. Results from this study indicate that the Bi-I and Bi-III structures are retained to low temperatures; however, there is no evidence to support a structural transition from Bi-V to Bi-VIII.
The structures and transition pressures of Group III-V and II-VI semiconductors and of a pseudobinary system (Ga/x/In/1-x/Sb) have been investigated. Results indicate that GaP, InSb, GaSb, GaAs and possible AlP assume Metallic structures at high pressures; a tetragonal, beta-Sn-like structure is adopted by only InSb and GaSb. The rocksalt phase is preferred in InP, InAs, AlSb, ZnO and ZnS. The model of Van Vechten (1973) gives transition pressures which are in good agreement with measured values, but must be refined to account for the occurrence of the ionic rocksalt structure in some compounds. In addition, discrepancies between the theoretical scaling values for volume changes at the semiconductor-to-metal transitions are observed.
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