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Pinning of magnetic-field induced Wigner molecules (WMs) confined in parabolic two-dimensional quantum dots by a charged defect is studied by an exact diagonalization approach. We found a re-entrant pinning of the WMs as function of the magnetic field, a magnetic field induced re-orientation of the WMs and a qualitatively different pinning behaviour in the presence of a positive and negative Coulomb impurity.
Using three-dimensional k.p calculation including strain and piezoelectricity, we showed that the size of the quantum dot (QD) in the growth direction determines the influence of the (In,Ga)As capping layer on the optical properties of [11k] grown InAs QDs, where k=1,2,3. For flat dots, increase of In concentration in the capping layer leads to a decrease of the transition energy, as is the case of [001] grown QDs, whereas for large dots an increase of the In concentration in the capping layer is followed by an increase of the transition energy up to a critical concentration of In, after which the optical transition energy starts to decrease.
Comment: 4 Physical Review style pages, 4 eps figures embedded, uses REVTeX 4 and graphicx package
Comment: 10 double-column pages, 6 eps figures embedded, uses ReVTEX4 graphicx package
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