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# Search results

15 records were found.

## Probing Spin Polarization with Andreev Reflection: A Theoretical Basis

Comment: 4 pages, 1 fig. Paper submitted to the 8th MMM-Intermag conference. Typos corrected

## Inelastic Scattering and Spin Polarization in Dilute Magnetic Semiconductor (Ga,Mn)Sb

Comment: 16 pages,4 figures

## Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films

Comment: 5 Figures

## Measurement of Spin Polarization by Andreev Reflection in Ferromagnetic In1-xMnxSb Epilayers

We carried out Point Contact Andreev Reflection (PCAR) spin spectroscopy measurements on epitaxially-grown ferromagnetic In1-xMnxSb epilayers with a Curie temperature of ~9K. The spin sensitivity of PCAR in this material was demonstrated by parallel control studies on its non-magnetic analog, In1-yBeySb. We found the conductance curves of the Sn point contacts with In1-yBeySb to be fairly conventional, with the possible presence of proximity-induced superconductivity effects at the lowest temperatures. The experimental Z-values of interfacial scattering agreed well with the estimates based on the Fermi velocity mismatch between the semiconductor and the superconductor. These measurements provided control data for subsequent PCAR measurements on ferromagnetic In1-xMnxSb, which indicated spin polarization in In1-xMnxSb to be 52 +- 3%.

## Spin Polarization and Electonic Structure of Room-Curie Ferromagnetic Mn5Ge3 Epilayers

Comment: 13 pages, 3 figures

## Transport Spin Polarization of High-Curie Temperature MnBi Films

We report on the study of the structural, magnetic, and transport properties of highly textured MnBi ﬁlms with the Curie temperature of 628 K. In addition to detailed measurements of resistivity and magnetization, we measure transport spin polarization of MnBi by Andreev reﬂection spectroscopy and perform fully relativistic band-structure calculations of MnBi. A spin polarization from 51% ± 1% to 63% ± 1% is observed, consistent with the calculations and with an observation of a large magnetoresistance in MnBi contacts. The band-structure calculations indicate that in spite of almost identical densities of states at the Fermi energy, the large disparity in the Fermi velocities leads to high transport spin polarization of MnBi. The correlation between the values of magnetization and spin polarization is discussed.

## Transport Spin Polarization of High-Curie Temperature MnBi Films

We report on the study of the structural, magnetic and transport properties of highly textured MnBi films with the Curie temperature of 628K. In addition to detailed measurements of resistivity and magnetization, we measure transport spin polarization of MnBi by Andreev reflection spectroscopy and perform fully relativistic band structure calculations of MnBi. A spin polarization from 51\pm1 to 63\pm1% is observed, consistent with the calculations and with an observation of a large magnetoresistance in MnBi contacts. The band structure calculations indicate that, in spite of almost identical densities of states at the Fermi energy, the large disparity in the Fermi velocities leads to high transport spin polarization of MnBi. The correlation between the values of magnetization and spin polarization is discussed.

## Ferromagnetism and spin polarized charge carriers in In$_{2}$O$_{3}$ thin films

Comment: 5 pages 5 figures

## The origin of high transport spin polarization in La$_{0.7}$Sr$_{0.3}$MnO$_{3}$: direct evidence for minority spin states

Comment: 6 pages, revtex, epsfigs embedded (two color figs)