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# Search results

33 records were found.

## Analysis of resonant responses of split ring resonators using conformal mapping techniques

We report a novel method for modeling the resonant frequency response of infra-red light, in the range of 2 to 10 microns, reflected from metallic spilt ring resonators (SRRs) fabricated on a silicon substrate. The calculated positions of the TM and TE peaks are determined from the plasma frequency associated with the filling fraction of the metal array and the equivalent LC circuit defined by the SRR elements. The capacitance of the equivalent circuit is calculated using conformal mapping techniques to determine the co-planar capacitance associated with both the individual and the neighbouring elements. The inductance of the equivalent circuit is based on the self-inductance of the individual elements and the mutual inductance of the neighboring elements. The results obtained from the method are in good agreement with experimental res...

## Electron transport in strongly disordered structures

Comment: Presented at ETOPIM 8

## Two-dimensional electron systems beyond the diffusive regime

Transport properties of disordered electron system can be characterized by the conductance, Lyapunov exponent, or level spacing. Two additional parameters, $K_{11}$ and $\gamma$ were introduced recently which measure the non-homogeneity of the spatial distribution of the electron inside the sample. % [Phys. Rev. Lett. {\bf 82}, 4272 (1999)]. For the orthogonal, unitary and symplectic two dimensional disordered models, we investigate numerically the system size dependence of these parameters in the diffusive and localized regime. Obtained size and disorder dependence of $K_{11}$ and $\gamma$ is in agreement with with single parameter transport theory. In the localized regime, $\gamma\to 0$ independently on the physical symmetry of the model. In the diffusive regime, $\gamma$ equals to the symmetry parameter $\beta$. For the symplecti...

## Conductance statistics near the Anderson transition

Paper reviews recent numerical data for the conductance distribution of disordered systems in the critical regime and in the localized regime. Of particular interest is the non-analytical form of the critical conductance distribution in the 3D and 4D systems, non-Gaussian form of the distribution of P(ln g) in localized 3D systems.

## Metal-insulator transition in three dimensional Anderson model: universal scaling of higher Lyapunov exponents

Comment: 4 pages, 2 figures

## Metal-insulator transition in system with topological disorder

Comment: 7 pages, 13 .eps figures

## Numerical studies of Anderson transition

Comment: LATEX, 6 .eps figures

## Critical conductance of two-dimensional chiral systems with random magnetic flux

Comment: to appear in Phys. Rev. B

## Critical conductance of the chiral 2d random flux model

Comment: EP2DS-17, Genua 2007, accepted for publication in Physica E

## Character of eigenstates of the 3D disordered Anderson Hamiltonian

Comment: 7 pages, 9 figures, resubmitted to Physical Review B