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We report on the noise of a lumped element Direct Current Superconducting Quantum Interference Device amplifier. We show that the noise temperature in the 4 GHz-8 GHz range over ranges of 10's of MHz is below 1 kelvin (three photons of added noise), characterize the overall behavior of the noise as a function of bias parameters, and discuss potential mechanisms which determine the noise performance in this amplifier. We show that this device can provide more than a factor of 10 improvement in practical system noise over existing phase-preserving microwave measurement systems in this frequency band.
Comment: 4 pages, 3 figures : Minor changes and Journal info
We have studied structural and transport properties of epitaxial NaxCoO2 thin films on (0001) sapphire substrate prepared by topotaxially converting an epitaxial Co3O4 film to NaxCoO2 with annealing in Na vapor. The films are c axis oriented and in-plane aligned with [10 1 0] NaxCoO2 rotated by 30 degrees from [10 1 0] sapphire. Different Na vapor pressures during the annealing resulted in films with different Na concentrations, which showed distinct transport properties.
We have studied structural and transport properties of epitaxial NaxCoO2NaxCoO2 thin films on (0001) sapphire substrate prepared by topotaxially converting an epitaxial Co3O4Co3O4 film to NaxCoO2NaxCoO2 with annealing in Na vapor. The films are cc-axis oriented and in-plane aligned with [100]NaxCoO2[101??0]NaxCoO2 rotated by 30?? from [100][101??0] sapphire. Different Na vapor pressures during the annealing resulted in films with different Na concentrations, which showed distinct transport properties.
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