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The valence band states confined in infinitely deep quantum dots made of diluted magnetic semiconductors (DMS) are considered theoretically. A complex anisotropic structure of the valence bands in DMSs with cubic symmetry described by the full Luttinger Hamiltonian is taken into account. It is found that the Zeeman splitting is very sensitive to the shape of the confining potential and, in particular, to its orientation relative to the direction of an external magnetic field. This sensitivity has its origin in a mixing of different spin components of a hole wave function which takes place for finite hole wave vectors ${\bf k}$. Several consequences of the effect are discussed, including a possibility to control the inter-dot tunneling by an external magnetic field. It is shown also that the polarizations of optical transitions in a s...
The static conductivity of the dilute magnetic semiconductor GaMnAs is calculated using the memory function formalism and time-dependent density-functional theory to account for impurity scattering and to treat Hartree and exchange interactions within the hole gas. We find that the Coulomb scattering off the charged impurities alone is not sufficient to explain the experimentally observed drop in resistivity below the ferromagnetic transition temperature: the often overlooked scattering off the fluctuations of localized spins is shown to play a significant role.
In semiconductors with inversion asymmetry, spin-orbit coupling gives rise to the well-known Dresselhaus and Rashba effects. If one considers quantum wells with two or more conduction subbands, an additional, intersubband-induced spin-orbit term appears whose strength is comparable to the Rashba coupling, and which remains finite for symmetric structures. We show that the conduction band spin splitting due to this intersubband spin-orbit coupling term is negligible for typical III-V quantum wells.
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