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We theoretically propose a scheme for a spin quantum bit based on a double quantum dot contacted to ferromagnetic elements. Interface exchange effects enable an all electric manipulation of the spin and a switchable strong coupling to a superconducting coplanar waveguide cavity. Our setup does not rely on any specific band structure and can in principle be realized with many different types of nanoconductors. This allows to envision on-chip single spin manipulation and read-out using cavity QED techniques.
We calculate the mesoscopic admittance $G(\omega)$ of a double quantum dot (DQD),which can be measured directly using microwave techniques. This quantity reveals spectroscopic information on the DQD and is also directly sensitive to a Pauli spin blockade effect. We then discuss the problem of a DQD coupled to a high quality photonic resonator. When the photon correlation functions can be developed along a random-phase-approximation-like scheme, the response of the resonator gives an access to $G(\omega)$.
Comment: Main text + Supplemental material file (15 pages, 5 figures), to appear in Physical Review Letters
We report on the electron analog of the single photon gun. On demand single electron injection in a quantum conductor was obtained using a quantum dot connected to the conductor via a tunnel barrier. Electron emission is triggered by application of a potential step which compensates the dot charging energy. Depending on the barrier transparency the quantum emission time ranges from 0.1 to 10 nanoseconds. The single electron source should prove useful for the implementation of quantum bits in ballistic conductors. Additionally periodic sequences of single electron emission and absorption generate a quantized AC-current.
We report on the GHz complex admittance of a chiral one dimensional ballistic conductor formed by edge states in the quantum Hall regime. The circuit consists of a wide Hall bar (the inductor L) in series with a tunable resistor (R) formed by a quantum point contact. Electron interactions between edges are screened by a pair of side gates. Conductance steps are observed on both real and imaginary parts of the admittance. Remarkably, the phase of the admittance is transmission-independent. This shows that the relaxation time of a chiral R-L circuit is resistance independent. A current and charge conserving scattering theory is presented that accounts for this observation with a relaxation time given by the electronic transit time in the c cuit.
We report on microwave operation of top-gated single carbon nanotube transistors. From transmission measurements in the 0.1-1.6 GHz range, we deduce device transconductance gm and gate-nanotube capacitance Cg of micro- and nanometric devices. A large and frequency-independent gm of about 20 microSiemens is observed on short devices, which meets the best dc results. The capacitance per unit gate length of 60 aF/micrometer is typical of top gates on a conventional oxide with a dielectric constant equal to 10. This value is a factor of 3-5 below the nanotube quantum capacitance which, according to recent simulations, favors high transit frequencies . For our smallest devices, we find a large transit frequency equal to 50 GHz with no evidence of saturation in length dependence.
We describe here the realization of a single electron source similar to single photon sources in optics. On-demand single electron injection is obtained using a quantum dot connected to the conductor via a tunnel barrier of variable transmission (quantum point contact). Electron emission is triggered by a sudden change of the dot potential which brings a single energy level above the Fermi energy in the conductor. A single charge is emitted on an average time ranging from 100 ps to 10 ns ultimately determined by the barrier transparency and the dot charging energy. The average single electron emission process is recorded with a 0.5 ns time resolution using a real-time fast acquisition card. Single electron signals are compared tosimulation based on scattering theory approach adapted for finite excitation energies.
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