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Comment: Talk given at the Adriatico Research Conference on ``Tunnelling and its implications'', 30 July--2 August 1996, ICTP, Trieste
We present an atomistic three-dimensional simulation of graphene nanoribbon field effect transistors (GNR-FETs), based on the self-consistent solution of the 3D Poisson and Schroedinger equation with open boundary conditions within the non-equilibrium Green's Function formalism and a tight-binding hamiltonian. With respect to carbon nanotube FETs, GNR-FETs exhibit comparable performance, reduced sensitivity on the variability of channel chirality, and similar leakage problems due to band-to-band tunneling. Acceptable transistor performance requires effective nanoribbon width of 1-2 nm, that could be obtained with periodic etching patterns or stress patterns.
Comment: 10 pages, 3 figures, submitted to IEEE EDL
Comment: 10 pages, 3 figures
In this paper we investigate "Warm Electron Injection" as a mechanism for NOR programming of double-gate SONOS memories through 2D full band Monte Carlo simulations. Warm electron injection is characterized by an applied VDS smaller than 3.15 V, so that electrons cannot easily accumulate a kinetic energy larger than the height of the Si/SiO2 barrier. We perform a time-dependent simulation of the program operation where the local gate current density is computed with a continuum-based method and is adiabatically separated from the 2D full Monte Carlo simulation used for obtaining the electron distribution in the phase space. In this way we are able to compute the time evolution of the charge stored in the nitride and of the threshold voltages corresponding to forward and reverse bias. We show that warm electron injection is a viable o...
Comment: RevTeX file, 26 pages, 3 Postscript figures, uses epsf.sty. submitted to Phys. Rev. B
Comment: This paper has been replaced with a new version (4 pages, 4 figures)
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