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Comment: Related papers at http://pettagroup.princeton.edu
Comment: 5 pages (2 col) including 4 figures
Comment: 4 pages, 4 figures, submitted to PRB rapid
Comment: 9 pages including 3 figures. The following article has been accepted by Journal of Applied Physics. After it is published, it will be found at http://jap.aip.org/
An investigation of the optical transmission properties of semimetallic ErAs films grown by molecular beam epitaxy reveals a maximum in transmission around 1.55 mu m. The semitransparent window extends from similar to 1.5 to 2.3 mu m. These films were found to have resistivities less than 7x10(-5) Omega cm and permit similar to 85% transmission for a 150 nm film and similar to 97% transmission for a 15 nm film with respect to a GaAs substrate at 1.55 mu m. These results suggest that ErAs may be a useful material for applications requiring transparent contacts from 1.5 to 2.3 mu m. Polycrystalline films of ErAs were grown on sapphire substrates to investigate optical properties of ErAs in the visible region. (c) 2006 American Institute of Physics.
Magneto-oscillations have, for the first time, been observed in the thermal conductance of GaAs/AlGaAs heterostructures containing two-dimensional electron systems. The oscillations result from a modulation of the thermal-phonon lifetime via coupling to the Landau-quantized electrons confined in quantum wells near the sample surface. These thermal-conductance measurements provide a new avenue for study of both the high-field density of states and the electron-phonon interaction in these semiconductor systems.
We report photomixer devices fabricated on a material consisting of self-assembled ErAs islands in GaAs, which is grown by molecular beam epitaxy. The devices perform comparably and provide an alternative to those made from low-temperature-grown GaAs. The photomixer's frequency response demonstrates that the material is a photoconductor with subpicosecond response time, in agreement with time-resolved differential reflectance measurements. The material also provides the other needed properties such as high photocarrier mobility and high breakdown field, which exceeds 2×10^5 V/cm. The maximum output power before device failure at frequencies of 1 THz was of order 0.1 µW. This material has the potential to allow engineering of key photomixer properties such as the response time and dark resistance.
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