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Comment: Major changes made: 1) Taking into account properly the contribution
of the resistance of monopolar junctions to the odd part of the resistance.
To better present the results we use a fitting parameter for the amplitude of
screening in graphene. 2) Wrong data for the diffusive model in figures 3, 9
and 10 was plotted in former version. 3) Figure 5 moved to EPAPS
Comment: 6 pages, 4 figures; Figs 3 and 4 completed and appendix added
Comment: 4+ pages, 3 figures
Comment: 4 pages, 5 figures, Supplementary information will come soon
Comment: 5 pages, 5 figures
Comment: 10 pp., 5 fig. cond-mat/0606258 was split into two papers to clarify
their separate stories. cond-mat/0606258v2 treats the effect of C60
intercalation on transport in nanotubes. 0704.3641 is on Kondo physics in a
nanotube in B-field. We now note: the splitting of Kondo resonances with
B-field is sub-linear at low field, in qualitative agreement with theories
Comment: v2: improved introduction and theory-experiment comparsion
Comment: Text and supplementary information. Text: 4 pages, 4 figures.
Supplementary information: 4 pages, 4 figures
Comment: Minor changes and Supp Info added
We report sharp peaks in the differential conductance of a single-electron
transistor (SET) at low temperature, for gate voltages at which charge
fluctuations are suppressed. For odd numbers of electrons we observe the
expected Kondo peak at zero bias. For even numbers of electrons we generally
observe Kondo-like features corresponding to excited states. For the latter,
the excitation energy often decreases with gate voltage until a new zero-bias
Kondo peak results. We ascribe this behavior to a singlet-triplet transition in
zero magnetic field driven by the change of shape of the potential that
confines the electrons in the SET.
