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Comment: Major changes made: 1) Taking into account properly the contribution of the resistance of monopolar junctions to the odd part of the resistance. To better present the results we use a fitting parameter for the amplitude of screening in graphene. 2) Wrong data for the diffusive model in figures 3, 9 and 10 was plotted in former version. 3) Figure 5 moved to EPAPS
Comment: 6 pages, 4 figures; Figs 3 and 4 completed and appendix added
Comment: 10 pp., 5 fig. cond-mat/0606258 was split into two papers to clarify their separate stories. cond-mat/0606258v2 treats the effect of C60 intercalation on transport in nanotubes. 0704.3641 is on Kondo physics in a nanotube in B-field. We now note: the splitting of Kondo resonances with B-field is sub-linear at low field, in qualitative agreement with theories
Comment: Text and supplementary information. Text: 4 pages, 4 figures. Supplementary information: 4 pages, 4 figures
We report sharp peaks in the differential conductance of a single-electron transistor (SET) at low temperature, for gate voltages at which charge fluctuations are suppressed. For odd numbers of electrons we observe the expected Kondo peak at zero bias. For even numbers of electrons we generally observe Kondo-like features corresponding to excited states. For the latter, the excitation energy often decreases with gate voltage until a new zero-bias Kondo peak results. We ascribe this behavior to a singlet-triplet transition in zero magnetic field driven by the change of shape of the potential that confines the electrons in the SET.
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