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Comment: 4 pages, 2 figures, RevTeX 4
Comment: 22 pages, 7 figures (compiled in); submitted
The long range character of the exchange coupling between localized magnetic moments indirectly mediated by the conduction electrons of metallic hosts often plays a significant role in determining the magnetic order of low-dimensional structures. In addition to this indirect coupling, here we show that the direct exchange interaction that arises when the moments are not too far apart may induce a non-collinear magnetic order that cannot be characterized by a Heisenberg-like interaction between the magnetic moments. We argue that this effect can be manipulated to control the magnetization alignment of magnetic dimers adsorbed to the walls of carbon nanotubes.
We present theoretical studies of the influence of spin orbit coupling on the spin wave excitations of the Fe monolayer and bilayer on the W(110) surface. The Dzyaloshinskii-Moriya interaction is active in such films, by virtue of the absence of reflection symmetry in the plane of the film. When the magnetization is in plane, this leads to a linear term in the spin wave dispersion relation for propagation across the magnetization. The dispersion relation thus assumes a form similar to that of an energy band of an electron trapped on a semiconductor surfaces with Rashba coupling active. We also show SPEELS response functions that illustrate the role of spin orbit coupling in such measurements. In addition to the modifications of the dispersion relations for spin waves, the presence of spin orbit coupling in the W substrate leads to a ...
We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which exists in the absence of net charge currents. Furthermore, we propose as a proof of concept how these spin currents can be modulated by an electrostatic gate. Because our proposal involves nano-sized systems that function with very high speeds and in the absence of any applied bias, it is potentially useful for the development of transistors capable of combining large processing speeds, enhanced integration and extremely low power consumption.
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