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We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but the peak amplitude is much larger than expected from the available hole band parameters. Data as a function of parallel magnetic field reveal additional anomalous features, including a recurrence of a zero-bias tunneling peak at very large fields. In a perpendicular magnetic field, we observe a robust and narrow tunneling peak at total filling factor $\nu_T=1$, signaling the formation of a bilayer quantum Hall ferromagnet.
Comment: 7 pages, 6 figures. Revised version has extended the numerical data with some modified conclusions
Comment: 3 pages, 2 figures. Accepted in Applied Physics Letters
Comment: 3 figures, accepted for publication in Phys. Rev. Lett
Comment: 19 pages, 4 figures, review article to appear in a book on semiconductor quantum bits, edited by O. Benson and F. Henneberger, published by Pan Stanford Publishing
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