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Comment: Submitted to Physical Review B on 17 April 2007. Revised version submitted on 6 July 2007
Comment: 17 pages including 11 figures; related publications can be found at http://www.fhi-berlin.mpg.de/th/th.html
Using three-dimensional k.p calculation including strain and piezoelectricity, we showed that the size of the quantum dot (QD) in the growth direction determines the influence of the (In,Ga)As capping layer on the optical properties of [11k] grown InAs QDs, where k=1,2,3. For flat dots, increase of In concentration in the capping layer leads to a decrease of the transition energy, as is the case of [001] grown QDs, whereas for large dots an increase of the In concentration in the capping layer is followed by an increase of the transition energy up to a critical concentration of In, after which the optical transition energy starts to decrease.
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