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Comment: To be published in the proceedings of CHARM07, Ithaca, NY, August 2007, eConf C070805
In order to study WW scattering or the decay of a heavy standard-model Higgs boson in the TeV region, it is necessary to use the channel W(→lν)+W(→jets). However, techniques are required for suppressing the severe background from mixed electroweak-QCD production of W+jets. We demonstrate that the charged multiplicity of the events can provide an extremely useful tool for distinguishing a jet system originating via real W decay from a jet system produced by the mixed electroweak-QCD processes. Analogous techniques will be useful for any process involving W’s→jets, whenever the W decaying to jets has pt≫mW and the primary background produces jets predominantly in a color-nonsinglet state; however the precise procedure must be optimized separately for each such process.
We are developing n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility. The bulk radiation damage after neutron and proton irradiations is characterized with the leakage current, charge collection and full depletion voltage. The detectors should provide acceptable signal, signal-to-noise ratio exceeding 15, after the integrated luminosity of 6000 fb−1, which is twice the sLHC integrated luminosity goal.
We have developed a novel and highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider. The sensors are designed for a fluence of 1x10 15 neq/cm2 and are fabricated from p-type, FZ, 6 in. (150 mm) wafers onto which we lay out a single 9.75 cmx9.75 cm large-area sensor and several 1 cm x 1 cm miniature sensors with various n-strip isolation structures. By evaluating the sensors both pre- and post-irradiation by protons and neutrons, we find that the full depletion voltage evolves to approximately 800 V and that the n-strip isolation depends on the p + concentration. In addition, we characterize the interstrip resistance, interstrip capacitance and the punch-through-protection (PTP) voltage. The first fabrication batch allowed us to identify the w...
We are developing n+-in-p, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment. The surface radiation damages of the sensors fabricated by Hamamatsu Photonics are characterized on the interstrip capacitance, interstrip resistance and punch-through protection evolution. The detector should provide acceptable strip isolation, exceeding the input impedance of the signal readout chip ∼1 kΩ, after the integrated luminosity of 6 ab−1, which is twice the luminosity goal.
We are developing n + -in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the superLHC (sLHC) proposed facility. The bulk radiation damage after neutron and proton irradiations is characterized with the leakage current, charge collection and full depletion voltage. The detectors should provide acceptable signal, signal-to-noise ratio exceeding 15, after the integrated luminosity of 6000 fb �1 , which is twice the sLHC integrated luminosity goal.
The ATLAS collaboration R&D group “Development of n-in-p Silicon Sensors for very high radiation environment” has developed single-sided p-type 9.75 cm×9.75 cm sensors with an n-type readout strips having radiation tolerance against the 1015 1-MeV neutron equivalent (neq)/cm2 fluence expected in the Super Large Hadron Collider. The compiled results of an evaluation of the bulk and strip parameter characteristics of 19 new non-irradiated sensors manufactured by Hamamatsu Photonics are presented in this paper. It was verified in detail that the sensors comply with the technical specifications required before irradiation. The reverse bias voltage dependence of various parameters, frequency dependence of tested capacitances, and strip scans of more than 23,000 strips as a test of parameter uniformity and strip quality over the whole se...
The BABAR Silicon Vertex Tracker (SVT) has been efficiently operated for six years since the start of data taking in 1999. Due to higher than expected background levels some unforeseen effects have appeared. We discuss: a shift in the pedestal for the channels of the AToM readout chips that are most exposed to radiation; an anomalous increase in the bias leakage current for the modules in the outer layers. Estimates of future radiation doses and occupancies are shown together with the extrapolated detector performance and lifetime, in light of the new observations. (c) 2006 Elsevier B.V. All rights reserved.
The ATLAS experiment is a general purpose detector aiming to fully exploit the discovery potential of the Large Hadron Collider (LHC) at CERN. It is foreseen that after several years of successful data-taking, the LHC physics programme will be extended in the so-called High-Luminosity LHC, where the instantaneous luminosity will be increased up to 5 x 10(34) cm(-2) s(-1). For ATLAS, an upgrade scenario will imply the complete replacement of its internal tracker, as the existing detector will not provide the required performance due to the cumulated radiation damage and the increase in the detector occupancy. The current baseline layout for the new ATLAS tracker is an all-silicon-based detector, with pixel sensors in the inner layers and silicon micro-strip detectors at intermediate and outer radii. The super-module is an integration co...
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